型号:

DMN2020LSN-7

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET N-CH 20V 6.9A SC59
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
DMN2020LSN-7 PDF
产品变化通告 Bond Wire Change 11/Nov/2011
标准包装 3,000
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 6.9A
开态Rds(最大)@ Id, Vgs @ 25° C 20 毫欧 @ 9.4A,4.5V
Id 时的 Vgs(th)(最大) 1.5V @ 250µA
闸电荷(Qg) @ Vgs 11.6nC @ 4.5V
输入电容 (Ciss) @ Vds 1149pF @ 10V
功率 - 最大 610mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SC-59-3
包装 带卷 (TR)
产品目录页面 1577 (CN2011-ZH PDF)
其它名称 DMN2020LSN-7DITR
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